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參數資料
| 型號： | NTD4810N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 54 A(30V, 54A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，54甲（30V的，54A條，功率MOSFET的） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 80K |
| 代理商： | NTD4810N |
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 2
1
Publication Order Number:
NTD4810N/D
NTD4810N
Power MOSFET
30 V, 54 A, Single NChannel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
20
V
Continuous Drain
Current (R
JA
) (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
10.8
A
8.4
Power Dissipation
(R
JA
) (Note 1)
Continuous Drain
Current (R
JA
) (Note 2)
P
D
2.0
W
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
8.6
A
6.7
Power Dissipation
(R
JA
) (Note 2)
Continuous Drain
Current (R
JC
)
(Note 1)
P
D
1.28
W
T
C
= 25
°
C
I
D
54
A
T
C
= 85
°
C
42
Power Dissipation
(R
JC
) (Note 1)
T
C
= 25
°
C
P
D
50
W
Pulsed Drain Current
t
p
=10 s
T
A
= 25
°
C
T
A
= 25
°
C
I
DM
120
A
Current Limited by Package
I
DmaxPkg
T
J
, T
stg
45
A
Operating Junction and Storage Temperature
55 to
175
°
C
Source Current (Body Diode)
I
S
41
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 14 A, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
E
AS
98
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
CASE 369D
IPAK
(Straight Lead
DPAK)
30 V
10 m @ 10 V
R
DS(on)
MAX
54 A
I
D
MAX
V
(BR)DSS
15.7 m @ 4.5 V
http://onsemi.com
1 2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
123
4
CASE 369AC
3 IPAK
(Straight Lead)
123
4
NChannel
D
S
G
Y
4
1
Gate
2
Drain3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
Y
4
Y
4
Y
WW
4810N = Device Code
G
= PbFree Package
= Year
= Work Week
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTD4810N-1G | 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4810N-35G | 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4810NH | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK |
| NTD4810NH-1G | 功能描述:MOSFET N-CH 30V 8.6A IPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NTD4810NH-35G | 功能描述:MOSFET N-CH 30V 8.6A IPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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