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參數資料
| 型號： | NTD60N02RT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| 中文描述： | 32 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 81K |
| 代理商： | NTD60N02RT4 |
Semiconductor Components Industries, LLC, 2004
December, 2004 Rev. 10
1
Publication Order Number:
NTD60N02R/D
NTD60N02R
Power MOSFET
62 A, 24 V, NChannel, DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
HighEfficiency DCDC Converters
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
24
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Thermal Resistance
JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C, Chip
Continuous @ T
C
= 25
°
C, Limited by Package
Continuous @ T
A
= 25
°
C, Limited by Wires
R
JC
P
D
I
D
I
D
I
D
2.6
58
62
50
32
°
C/W
W
A
A
A
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
80
1.87
10.5
C/W
W
A
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
120
1.25
8.5
°
C/W
W
A
Operating and Storage Temperature
T
J
, and
T
stg
55 to
175
°
C
Single Pulse DraintoSource Avalanche Energy
Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10.0 Vdc,
I
L
= 11 Apk, L = 1.0 mH, R
G
= 25 )
E
AS
60
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
MARKING DIAGRAM
& PIN ASSIGNMENTS
http://onsemi.com
Y
WW
60N02R = Device Code
= Year
= Work Week
24 V
8.4 m @ 10 V
R
DS(on)
TYP
62 A
I
D
MAX
V
(BR)DSS
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1
Gate
3
Source
2
Drain
4
Drain
Y
T
N
Y
T
N
1
Gate
3
Source
2
Drain
4
Drain
123
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NChannel
D
S
G
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
1
2
3
4
1 2
3
4
CASE 369C
DPAK
(Surface Mount)
STYLE 2
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相關代理商/技術參數 |
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| NTD60N02RT4G | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N03 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述:Power MOSFET 60A,28V N-CH 制造商:ON Semiconductor 功能描述:Power MOSFET 60Amps, 28Volts N-Channel DPAK |
| NTD60N03-001 | 功能描述:MOSFET N-CH 28V 60A IPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NTD60N03-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 60 Amps, 28 Volts |
| NTD60N03T4 | 功能描述:MOSFET N-CH 28V 60A DPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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