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參數資料
| 型號： | NTF2955 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 56K |
| 代理商： | NTF2955 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 1
1
Publication Order Number:
N
TF2955/D
NTF2955
Power MOSFET
60 V, 2.6 A, Single PChannel SOT223
Features
TMOS7 Design for low R
DS(on)
Withstands High Energy in Avalanche and Commutation Modes
Applications
Power Supplies
PWM Motor Control
Converters
Power Management
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
V
GatetoSource Voltage
V
GS
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
2.6
A
T
A
= 85
°
C
2.0
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
2.3
W
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
I
D
1.7
A
T
A
= 85
°
C
1.3
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
1.0
W
Pulsed Drain Current
tp = 10 s
I
DM
10.4
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
175
°
C
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 25 V, V
G
= 10 V, I
PK
= 6.7 A,
L = 10 mH, R
G
= 25 )
EAS
225
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoTab (Drain) Steady State (Note 2)
R
JC
14
°
C/W
JunctiontoAmbient Steady State (Note 1)
R
JA
65
JunctiontoAmbient Steady State (Note 2)
R
JA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.127 in
2
[1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in
2
)
D
S
G
PChannel
http://onsemi.com
60 V
145 m @ 10 V
R
DS(on)
TYP
2.6 A
I
D
MAX
V
(BR)DSS
1
2
3
4
Device
Package
Shipping
ORDERING INFORMATION
NTF2955T1
SOT223
1000/Tape & Reel
SOT223
CASE 318E
STYLE 3
LWW
MARKING
DIAGRAM
2955
2955
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
3
Source
2
1
4
Gate
Drain
Drain
NTF2955T3
SOT223
4000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| NTF2955T1 | Power MOSFET |
| NTF2955T3 | Power MOSFET |
| NTF3055-100 | Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V邏輯電平,N通道， SOT-223 封裝的功率MOSFET) |
| NTF3055-160 | Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| NTF3055-160T1 | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NTF2955PT1G | 功能描述:MOSFET PFET 60V 2.6A 0.14 SOT223 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF2955T1 | 功能描述:MOSFET -60V 2.6A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF2955T1G | 功能描述:MOSFET -60V 2.6A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF2955T1G-CUT TAPE | 制造商:ON 功能描述:NTF Series P-Channel 60 V 145 mOhm 2.3 W Surface Mount Power MOSFET - SOT-223 |
| NTF2955T3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
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