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參數資料
| 型號： | NTGD3133P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 67K |
| 代理商： | NTGD3133P |
Semiconductor Components Industries, LLC, 2006
July, 2006 Rev. 0
1
Publication Order Number:
NTGD3133P/D
NTGD3133P
Power MOSFET
20 V, 2.5 A, PChannel, TSOP6 Dual
Features
Reduced Gate Charge for Fast Switching
2.5 V Gate Rating
Leading Edge Trench Technology for Low On Resistance
Independent Devices to Provide Design Flexibility
This is a PbFree Device
Applications
LiIon Battery Charging
Load Switch / Power Switching
DC to DC Conversion
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
20
±
12
2.3
V
GatetoSource Voltage
Continuous Drain
Current (Note 1)
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
1.6
t
≤
5 s
Steady
State
2.5
Power Dissipation
(Note 1)
T
A
= 25
°
C
P
D
1.1
W
t
≤
5 s
Steady
State
1.3
Continuous Drain
Current (Note 2)
T
A
= 25
°
C
T
A
= 85
°
C
I
D
1.6
A
1.2
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.56
W
Pulsed Drain Current
t
p
= 10 s
I
DM
±
7.0
55 to
150
A
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
Source Current (Body Diode)
I
S
T
L
0.8
A
°
C
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
260
1
2
3
6
5
4
G1
S2
G2
D1
S1
D2
http://onsemi.com
PCHANNEL MOSFET
SC = Specific Device Code
M
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
TSOP6
CASE 318G
MARKING
DIAGRAM
(Top View)
PIN CONNECTION
20 V
200 m @ 2.5 V
145 m @ 4.5 V
R
DS(on)
MAX
2.5 A
I
D
MAX
V
(BR)DSS
G1
D1
S1
SC M
1
1
Device
Package
Shipping
ORDERING INFORMATION
NTGD3133PT1G
TSOP6
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
PCHANNEL MOSFET
G2
D2
S2
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