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參數(shù)資料
| 型號(hào)： | NTR1P02T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET |
| 中文描述： | 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | MINIATURE, CASE 318-09, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 46K |
| 代理商： | NTR1P02T1 |
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 3
1
Publication Order Number:
NTR1P02T1/D
NTR1P02T1
Power MOSFET
20 V, 1 A, PChannel SOT23 Package
Features
Ultra Low OnResistance Provides Higher Efficiency
and Extends Battery Life
R
DS(on)
= 0.180 , V
GS
= 10 V
R
DS(on)
= 0.280 , V
GS
= 4.5 V
Power Management in Portable and BatteryPowered Products
Miniature SOT23 Surface Mount Package Saves Board Space
Mounting Information for SOT23 Package Provided
Applications
DCDC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage Continuous
V
GS
±
20
V
Drain Current
Continuous @ T
A
= 25
°
C
Pulsed Drain Current (t
p
≤
1 s)
I
D
I
DM
1.0
2.67
A
Total Power Dissipation @ T
A
= 25
°
C
P
D
400
mW
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Thermal Resistance JunctiontoAmbient
R
JA
300
°
C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8
″
from case for 10 s)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
D
G
S
Device
Package
Shipping
ORDERING INFORMATION
NTR1P02T1
SOT23
3000/Tape & Reel
PChannel
NTR1P02T3
SOT23
10,000/Tape & Reel
http://onsemi.com
20 V
148 m @ 10 V
R
DS(on)
TYP
1.0 A
I
D
MAX
V
(BR)DSS
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
P2
W
= Specific Device Code
= Work Week
3
1
3
Drain
1
Gate
2
Source
P2W
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTR1P02LT1 | Power MOSFET |
| NTR1P02LT1G | Power MOSFET |
| NTR1P02LT3 | Power MOSFET |
| NTR1P02LT3G | Power MOSFET |
| NTR1P02T3 | Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTR1P02T1G | 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR1P02T1G | 制造商:ON Semiconductor 功能描述:TRANSISTORMOSFETP-CHANNEL20V V(BR)DSS 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 1A SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS |
| NTR1P02T1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 20 V 148 mOhm 440 mW Surface Mount Power MOSFET - SOT-23 |
| NTR1P02T3 | 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR1P02T3G | 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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