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參數資料
型號: NTR4003N
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
封裝: LEAD FREE, CASE 318-08, 3 PIN
文件頁數: 1/5頁
文件大?。?/td> 61K
代理商: NTR4003N
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 0
1
Publication Order Number:
NTR4003N/D
NTR4003N
Small Signal MOSFET
30 V, 0.56 A, Single NChannel, SOT23
Features
Low Gate Voltage Threshold (V
GS(TH)
) to Facilitate Drive Circuit
Design
Low Gate Charge for Fast Switching
ESD Protected Gate
SOT23 Package Provides Excellent Thermal Performance
Minimum Breakdown Voltage Rating of 30 V
These are PbFree Devices
Applications
Notebooks:
Level Shifters
Logic Switches
Low Side Load Switches
Portable Applications
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
V
GatetoSource Voltage
V
GS
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
0.5
A
T
A
= 85
°
C
0.37
Power Dissipation
(Note 1)
Steady State
P
D
0.69
W
Continuous Drain
Current (Note 1)
t < 10 s
T
A
= 25
°
C
I
D
0.56
A
T
A
= 85
°
C
0.40
Power Dissipation
(Note 1)
t < 5 s
P
D
0.83
W
Pulsed Drain Current
t
p
= 10 s
I
DM
1.7
A
Operating Junction and Storage Temperature
T
J
,
Tstg
55 to
150
°
C
Source Current (Body Diode)
I
S
1.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient Steady State (Note 1)
R
JA
180
°
C/W
JunctiontoAmbient t < 10 s (Note 1)
R
JA
150
JunctiontoAmbient Steady State (Note 2)
R
JA
300
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
1
3
2
Device
Package
Shipping
ORDERING INFORMATION
http://onsemi.com
30 V
1.5 @ 2.5 V
1.0 @ 4.0 V
R
DS(on)
TYP
0.56 A
I
D
MAX
V
(BR)DSS
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
TR8
M
= Specific Device Code
= Date Code
= PbFree Package
3
1
3
Drain
1
Gate
2
Source
NChannel
NTR4003NT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TR8 M
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
NTR4003NT3G
SOT23
(PbFree)
10,000/Tape & Reel
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相關代理商/技術參數
參數描述
NTR4003NT1G 功能描述:MOSFET NFET 30V .56A 1500M RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTR4003NT3G 功能描述:MOSFET NFET 30V .56A 1500M RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTR4003NT3G 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 30V 560mA SOT-23 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 30V, 560mA SOT-23
NTR4101P 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Power MOSFET −20 V, Single P−Channel, SOT−23
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