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參數資料
| 型號： | NUP4304M6_06 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| 中文描述： | 低電容二極管陣列，在4條數據線路ESD保護 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 78K |
| 代理商： | NUP4304M6_06 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 1
1
Publication Order Number:
NUP4304MR6/D
NUP4304MR6
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
NUP4304MR6 is a MicroIntegration
device designed to provide
protection for sensitive components from possible harmful electrical
transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (1.5 pF Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC6100042 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Applications
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
PbFree Package is Available
MAXIMUM RATINGS
(Each Diode) (T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
V
RRM
70
V
Average Rectified Forward
Current (Note 1)
(averaged over any 20 ms period)
I
F(AV)
715
mA
Repetitive Peak Forward Current
I
FRM
450
mA
NonRepetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
I
FSM
2.0
1.0
0.5
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
Device
Package
Shipping
ORDERING INFORMATION
NUP4304MR6T1
TSOP6
3000/Tape & Reel
MARKING DIAGRAM
TSOP6
CASE 318F
PLASTIC
http://onsemi.com
LG M
1
6
6 I/O
5 V
N
4 I/O
I/O 1
V
P
2
1/O 3
2
5
3
4
PIN CONFIGURATION
AND SCHEMATIC
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NUP4304MR6T1G
TSOP6
(PbFree)
3000/Tape & Reel
LG
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
相關PDF資料 |
PDF描述 |
|---|---|
| NUP4304MR6T1 | Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4304MR6T1G | Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4304MR6 | Low Capacitance Diode Array for ESD Protection in Four Data Lines(低電容二極管陣列ESD保護器) |
| NUP45V6P5 | Low Capacitance Quad Array for ESD Protection(ESD保護，低容抗方形陣列) |
| NUP412VP5 | Low Capacitance Quad Array for ESD Protection(ESD保護，低容抗方形陣列) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NUP4304MR6 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4304MR6T1 | 功能描述:整流器 Low Cap. for ESD RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NUP4304MR6T1G | 功能描述:整流器 Low Cap. for ESD Protection in 4 Line RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NUP45V6P5 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection |
| NUP45V6P5_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection |
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