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參數資料
型號: NUS3045MN
廠商: ON SEMICONDUCTOR
英文描述: Overvoltage Protection IC with Integrated MOSFET
中文描述: 過壓保護集成電路集成MOSFET
文件頁數: 1/12頁
文件大小: 138K
代理商: NUS3045MN
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 4
Publication Order Number:
NUS2045MN/D
NUS2045MN, NUS3045MN
Overvoltage Protection IC
with Integrated MOSFET
These devices represent a new level of safety and integration by
combining the NCP345 overvoltage protection circuit (OVP) with a
20 V Pchannel power MOSFET (NUS2045MN) or with a 30 V
Pchannel power MOSFET (NUS3045MN). They are specifically
designed to protect sensitive electronic circuitry from overvoltage
transients and power supply faults. During such hazardous events, the
IC quickly disconnects the input supply from the load, thus protecting
the load before any damage can occur.
The OVP ICs are optimized for applications using an external
ACDC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. They have a nominal overvoltage
threshold of 6.85 V which makes them ideal for single cell LiIon as
well as 3/4 cell NiCD/NiMH applications.
Features
OvervoltageTurnOff Time of Less Than 1.0 s
Accurate Voltage Threshold of 6.85 V, Nominal
Undervoltage Lockout Protection; 2.8 V, Nominal
Control Input Compatible with 1.8 V Logic Levels
20 V or 30 V Integrated PChannel Power MOSFET
Low R
DS(on)
= 71 m @ 4.5 V for NUS2045MN
Low R
DS(on)
= 66 m @ 4.5 V for NUS3045MN
Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable
Applications
Maximum Solder Reflow temperature @ 235
°
C for MNT1 suffix and
260
°
C for MNT1G suffix
PbFree Packages are Available
Benefits
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Applications
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
http://onsemi.com
DFN8
CASE 506AL
Device
Package
Shipping
ORDERING INFORMATION
NUS2045MNT1
DFN8
3000 Tape & Reel
IN
GND
CNTRL
DRAIN
V
CC
OUT
GATE
SRC
(Bottom View)
PIN ASSIGNMENT
x045
x
A
Y
WW
= Device Code
= 2 or 3
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
x045
AYWW
1
1
2
3
4
8
7
6
5
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUS3045MNT1
DFN8
3000 Tape & Reel
1
8
GND
10
DRAIN
9
NUS2045MNT1G
DFN8
(PbFree)
3000 Tape & Reel
NUS3045MNT1G
DFN8
(PbFree)
3000 Tape & Reel
相關PDF資料
PDF描述
NUS3045MNT1 Overvoltage Protection IC with Integrated MOSFET
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NUS3046MN Overvoltage Protection IC with Integrated MOSFET
相關代理商/技術參數
參數描述
NUS3045MNT1 功能描述:IC OVP W/30V P-CH MOSFET DFN8 RoHS:否 類別:過電壓,電流,溫度裝置 >> TVS - 其它復合 系列:- 標準包裝:1 系列:- 電壓 - 工作:120V 電壓 - 箝位:- 技術:混合技術 功率(瓦特):- 電路數:1 應用:通用 封裝/外殼:模塊 供應商設備封裝:- 包裝:散裝 其它名稱:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST
NUS3045MNT1G 功能描述:監控電路 PM OVP W/MOSFET 30V RoHS:否 制造商:STMicroelectronics 監測電壓數: 監測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監視器:No Watchdog 電池備用開關:No Backup 上電復位延遲(典型值):10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
NUS3046MN 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Overvoltage Protection IC with Integrated MOSFET
NUS3046MNT1G 功能描述:MOSFET 5.5V OVP IC W/ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NUS3055MUTAG 功能描述:監控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監測電壓數: 監測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監視器:No Watchdog 電池備用開關:No Backup 上電復位延遲(典型值):10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
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