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參數資料
| 型號： | NX8561JC |
| 廠商： | NEC Corp. |
| 英文描述： | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| 中文描述： | InGaAsP的應變直流異質結激光二極管模塊1 625納米遙測應用 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 65K |
| 代理商： | NX8561JC |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999, 2000
Document No. P14128EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
LASER DIODE
NX7660JC
InGaAsP STRAINED DC-PBH LASER DIODE MODULE
1 625 nm TELEMETRY APPLICATION
The mark
shows major revised points.
DESCRIPTION
The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode
DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry
equipment.
FEATURES
Output power
Long Wavelength
Wide operating temperature range
Internal thermoelectric cooler, thermistor
Hermetically sealed 14-pin DIP package
Single mode fiber pigtail
P
f
= 5 mW MIN. @ I
F
= 65 mA CW
λ
C
= 1 625 nm
T
C
=
5 to +70
°
C
8
Optical Fiber
SM-9/125,
Length: 1 m TYP.
#8
#7
#1
#14
PD
LD
–
+
BOTTOM VIEW
Thermistor
C
Case
1
2
3
4
5
6
7
Cooler Anode
NC
NC
NC
Laser Anode,
Case Ground
NC
PD Cathode
8
9
10
11
12
13
14
PD Anode
Laser Cathode
Laser Anode,
Case Ground
Thermistor
Thermistor
NC
Cooler Cathode
Pin No.
Pin No.
PIN CONNECTIONS
Function
Function
PACKAGE DIMENSIONS
in millimeters
1
2
1.0
20.84
20.8
7
1
4.0
3.2
5.1
1
6
5
1
1
2.54
3
0
0.45
5
3.0
相關PDF資料 |
PDF描述 |
|---|---|
| NX8561JD | 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| NX7660JC | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX7660JC-BA | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX7660JC-CA | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX8562LB | 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NX8561JD | 制造商:NEC 制造商全稱:NEC 功能描述:1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| NX8562 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) |
| NX8562-AZ | 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) |
| NX8562LB | 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8562LB279 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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