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參數資料
| 型號： | NX8563LB485 |
| 廠商： | NEC Corp. |
| 英文描述： | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| 中文描述： | 連續光源InGaAsP的應變量子阱激光器激光二極管模塊的D -波分復用應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 320K |
| 代理商： | NX8563LB485 |
NEC's DIRECTLY MODULATED
InGaAsP MQW-DFB
LASER DIODE MODULE
FOR 2.5 GB/s, 110 KM AND 240 KM REACH
DWDM METRO AND CATV APPLICATIONS
NX8563LA
Series
FEATURES
PEAK OUTPUT POWER
Pf = 10 mW MIN.
INTERNAL THERMO-ELECTRIC COOLER AND
ISOLATOR
HERMETICALLY SEALED 14-PIN BUTTERFLY
PACKAGE
SINGLE MODE FIBER PIGTAIL
WIDE OPERATION TEMPERATURE RANGE
AVAILABLE FOR DWDM WAVELENGTHS BASED ON
ITU-T RECOMMENDATIONS
NEC's NX8563LA Series is a 1 550 nm Multiple Quantum
Well (MQW) structured Distributed Feed-Back (DFB) laser
diode module with Single Mode Fiber.
It is designed as directly modulation light source and
ideal for optical transmission systems. The device is
available for Dense Wavelength Division Multiplexing
(DWDM) wavelengths based on ITU-T recommendations,
enabling a wide range of applications.
DESCRIPTION
California Eastern Laboratories
DATA SHEET
SYMBOL
PARAMETER AND CONDITIONS
UNIT
MIN
TYP
MAX
Tset
Laser Set Temperature
°
C
30
45
VF
Forward Voltage, Pf = 10 mW
V
0.9
2.0
Ith
Threshold Current
mA
20
40
Pf
Optical Output Power from Fiber, IF = Iop, TLD = Tset
mW
10
Iop
Operation Current
mA
125
Pth
Threshold Output Power, IF = Ith
μ
W
100
η
Quantum Efciency, CW
W/A
0.142
0.17
λp
Peak Emission Wavelength, Pf = 10 mW, CW, TLD = Tset
nm
1 530
ITU-T *1
1 562
Δν
Spectral Line Width, Pf = 10 mW, CW, 3 dB down
MHz
1
5
SMSR
Side Mode Suppression Ratio, Pf = 10 mW, under modulation
dB
30
35
ZIN
Input Impedance
Ω
25
RIN
Relative Intensity Noise, Pf = 10 mW, 20 MHz to 3 GHz
dB/Hz
140
tr /tf
Rise and Fall Time, 20-80%/80-20%, Tc = 25°C
ps
120
S11
Input Return Loss, f = 50 MHz to 3 GHz
f = 3 GHz to 6 GHz
dB
6
3
BW
Band Width, 3 dB, Pf = 10 mW
GHz
2.5
DP
Dispersion Penalty, Tc = 25°C*2
dB
2.0
ELECTRO-OPTICAL CHARACTERISTICS (TLD = TSET, TC = -20 + 85°C)
Notes:
*1 Available for DWDM wavelengths based on ITU-T recommendation. Please refer to the ORDERING INFORMATION.
*2 2.48832 Gb/s, PRBS 2231, duty cycle, Extinction Ratio ≥ 8.5 dB, BER = 1010, NX8563LAS: 1 800 ps/nm(100 km),
NX8563LA: 4 320 ps/nm(240 km)
相關PDF資料 |
PDF描述 |
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| NX8563LB485-BA | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB485-CA | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB501 | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB501-BA | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB501-CA | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NX8563LB485-BA | 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB485-CA | 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB493 | 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB493-BA | 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8563LB493-CA | 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
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