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參數資料
| 型號： | OMH315 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE |
| 中文描述： | 雙通道，低電壓，低的RDS（on）MOSFET的H橋在一個塑料包裝電路 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | OMH315 |
2.1 - 29
2.1
OMH310
OMH315
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
4 11 R0
DUAL, LOW VOLTAGE, LOW R
DS(on)
, MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
FEATURES
H-Bridge Configuration
Zener Gate Protection
10 m Shunt Resistor
2 Linear Thermal Sensors, One For Each Bridge
Isolated Package
Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common V
DD
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
MAXIMUM RATINGS
(T
C
= @ 25°C)
Part
Number
V
(Volts)
R
(m )
I
Package
(Amps)
OMH310
OMH315
50
50
100
70
15
20
MP-3
MP-3
ABSOLUTE MAXIMUM RATINGS
(T
C
= @ 25°C unless otherwise noted)
Parameter
Drain Source Voltage, V
DS
Drain-Gate (R
GS
= 1m ), V
DGR
Continuous Drain Current, I
D
@ T
C
= 25°C
Continuous Drain Current,
I
D
@ T
C
= 70°C
Pulse Drain Current, I
DM (1)
Maximum Power Dissipation, P
D
@ T
C
= 25°C
(2)
Maximum Power Dissipation,
P
D
@ T
C
= 70°C
(2)
Linear Derating Factor, Junction-To-Case
Thermal Resistance, Junction-To-Case
OMH310
50
50
15
11
56
20
1 1
0 . 2
5.0
OMH315
50
50
25
16
100
50
18
0.33
3.0
Units
V
V
A
A
A
W
W
W/C
°C/W
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.
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| OMH360B | 功能描述:板機接口霍耳效應/磁性傳感器 Hall Effect Sensor RoHS:否 制造商:Honeywell 類型:Bipolar Hall-Effect Digital Position Sensor 工作電源電壓:3 V to 24 V 電源電流:3.5 mA 最大輸出電流:20 mA 工作點最小值/最大值:5 G, 55 G 最小/最大釋放點（Brp）:- 55 G, - 5 G 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 |
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