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參數資料
| 型號： | OP234W |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs Hermetic Infrared Emitting Diodes |
| 中文描述： | 3.94 mm, 1 ELEMENT, INFRARED LED, 850 nm |
| 封裝： | HERMETIC SEALED, TO-46, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 93K |
| 代理商： | OP234W |
Fea ures
Very high speed
Enhanced temperature range
Wide irradiance pattern
Mechanically and spectrally matched
to the OP800WSL and OP830SL
series devices
Significantly higher power output than
GaAs at equivalent drive currents
TO-46 hermetically sealed package
Case is electrically connected to the
cathode
De scrip ion
The OP234W device is an 850 nm
gallium aluminum arsenide infrared
emitting diodes mounted in hermetically
sealed packages. The broad irradiance
pattern provides relatively even
illumination over a large area.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Re verse Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Con inu ous For ward Cur ent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak For ward Cur ent (2
μ
s pulse width, 0.1% duty cy cle) . . . . . . . . . . . . . . . . 10.0 A
Stor age Tem pera ure Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +125
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow
soldering.
(2) Derate linearly 2.0 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average radiant intensity emitted by the IRED within a cone
formed from the IRED chip to an aperture. The aperture of diameter 0.250” is located a
distance of 0.466” from the flange (measurement plane) to the aperture plane (parallel to the
measurement plane) along the optical and mechanical axis. The cone formed is a 30
°
cone.
The radiant intensity is not necessarily uniform within the measured area.
(4) Measurement made with 100
μ
s pulse measured at the trailing edge of the pulse with a duty
cycle of 0.1% and an I
F
= 100 mA.
Prod uct Bul e in OP234W
P R E L I M I N A R Y
July 2001
GaA As Her metic In ra ed Emit ing Di odes
Type OP234W
相關PDF資料 |
PDF描述 |
|---|---|
| OP235W | GaAlAs Hermetic Infrared Emitting Diodes |
| OP236TX | Hi- Reliability GaAlAs Infrared Emitting Diodes |
| OP235TX | Hi- Reliability GaAlAs Infrared Emitting Diodes |
| OP235TXV | Hi- Reliability GaAlAs Infrared Emitting Diodes |
| OP236TXV | Hi- Reliability GaAlAs Infrared Emitting Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| OP235 | 功能描述:紅外發射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP235TX | 功能描述:紅外發射源 TO-46, GaAlAs Ifrared emitting diode RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP235TXV | 功能描述:紅外發射源 TO-46, GaAlAs Ifrared emitting diode RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP235W | 功能描述:紅外發射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP236TX | 功能描述:紅外發射源 TO-46, GaAlAs Ifrared emitting diode RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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