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參數資料
| 型號： | OP245PS |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 紅外LED |
| 英文描述： | Plastic Point Source In fra red Emitting Diode |
| 中文描述： | 1 ELEMENT, INFRARED LED, 850 nm |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 100K |
| 代理商： | OP245PS |
Fea ures
Point source irradiance pattern
Wavelength matched to silicon’s peak
response
Fast switching speed
Side-looking package for space limited
applications
De scrip ion
The OP245PS is an 850 nm, infrared
emItting diode molded in IR transmissive
amber-tinted epoxy packages. The
side-looking package is for use in PC
board mounted slotted switches or as
easily mounted interrupt detectors.
The stable V
F
vs. Temperature
characteristic make them ideal for
applications where voltage is limited
(such as battery operation).
The low t
r
/t
f
make them ideal for high
speed operations.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Re verse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Con in u ous For ward Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur ent (2
μ
s pulse width, 0.1% duty cy cle). . . . . . . . . . . . . . . . . . 1.0 A
Stor age and Op er ating Tem per a ure Range. . . . . . . . . . . . . . . . . . . -40
°
C to +100
°
C
Lead Sol dering Tem per a ure [1/16 inch (1.6mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
°
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
NOTES:
(1) RMA flux is rec om mended. Du a ion can be ex ended to 10 seconds maximum when flow
sol der ng. A maximum of 20 grams force may be ap plied to the leads when sol der ng.
(2) De ate lin early 1.33 mW/
°
C above 25
°
.
(3) E
e(APT)
is a mea sure ment of the av er age apertured ra di ant in ci dence upon a sens ng area
0.180” (4.57 mm) in di am e er, per pen dic u ar to and cen ered on the me chan cal axis of the
lens, and 0.653” (16.6 mm) from the mea sure ment sur ace. E
e(APT)
is not nec es sar ly
uni orm within the mea sured area.
Prod uct Bul e in OP245PS
November 2000
Plas ic Point Source In ra ed Emitting Diode
Type OP245PS
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
7
Anode
Cathode
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相關代理商/技術參數 |
參數描述 |
|---|---|
| OP245PS_06 | 制造商:OPTEK 制造商全稱:OPTEK 功能描述:Plastic Point Source Infrared Emitting Diode |
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