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參數(shù)資料
| 型號： | OP299 |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs Plastic Infrared Emitting Diode |
| 中文描述： | 4.955 mm, 1 ELEMENT, INFRARED LED, 890 nm |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 226K |
| 代理商： | OP299 |
Fea ures
Characterized at 5mA for battery
operated systems or other low drive
current systems
Wide irradiance pattern (OP294) or
narrow irradiance pattern (OP299)
Significantly higher power output than
GaAs at equivalent drive currents
Wavelength matched to silicon’s peak
response
T-1 3/4 package
De scrip ion
The OP294 and OP299 are gallium
arsenide infrared emitting diodes
designed for low current or power limited
applications (such as battery supplies).
These LEDs are similar in design to the
OP290 and OP295 but use a smaller
chip which increases output
efficiency at low current levels by
increasing current density. Light output
can be maximized with continuous (d.c.)
forward current up to 100mA or with
pulsed forward current operation up to
750 mA. The chip is mounted in an IR
transmissive plastic package and has
been designed and tested for use with
OP593/598 phototransistors or similar
photodetector.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Con inu ous For ward Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak For ward Cur ent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mA
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.80 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and 1.429" (36.3 mm) from the measurement surface. E
e(APT)
is not necessarily
uniform within the measured area.
(4) E
is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and .500" (12.7 mm) from the measurement surface. E
e(APT)
is not necessarily
uniform within the measured area.
(5) Cathode lead is 0.070" nominal shorter than anode lead.
Prod uct Bul e in OP294
June 1996
GaA As Plas ic In ra ed Emit ing Di ode
Types OP294, OP299
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
2-56
相關PDF資料 |
PDF描述 |
|---|---|
| OP297 | GaAlAs Plastic Infrared Emitting Diode(鋁砷化鎵塑料封裝紅外發(fā)光二極管,窄入射模式，峰值前向電流1.0A) |
| OP295 | GaAlAs Plastic Infrared Emitting Diode(鋁砷化鎵塑料封裝紅外發(fā)光二極管,窄入射模式，峰值前向電流5.0A) |
| OP296 | GaAlAs Plastic Infrared Emitting Diode(鋁砷化鎵塑料封裝紅外發(fā)光二極管,窄入射模式，峰值前向電流2.0A) |
| OP298AA | Plastic Infrared Emitting Diode |
| OP296C | Plastic Infrared Emitting Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| OP3 | 制造商:VOX Power 功能描述: 制造商:Vox Power 功能描述: 制造商:VOX POWER LTD 功能描述: |
| OP30 | 制造商:Brady Corporation 功能描述: |
| OP300 | 制造商:Brady Corporation 功能描述: |
| OP300SL | 功能描述:光電晶體管 NPN Photodarlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP301 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon Photodarlingtons |
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