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參數資料
| 型號： | OP750D |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內帶一個基極-發射極電阻,集電極電流7.0mA) |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 438K |
| 代理商： | OP750D |
Fea ures
Wide receiving angle
Variety of sensitivity ranges
Side-looking package for space
limited applications
Base-emitter resistor provides
ambient light protection
De scrip ion
The OP750 series devices consist of an
NPN silicon phototransistor molded in a
clear epoxy package. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy
PC board mounting of slotted optical
switches or optical interrupt detectors.
This series is mechanically and
spectrally matched to the OP140 and
OP240 series of infrared emitting
diodes.
The phototransistor has an internal
base-emitter resistor which provides
protection from low level ambient
lighting conditions. This feature is also
useful when the media being detected is
semi-transparent to infrared light in
interruptive applications.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit er Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col ec or DC Cur ent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/
o
C above 25
o
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase I
C(ON)
to 50
μ
A.
Typi cal Per orm ance Curves
Prod uct Bul e in OP750
June 1999
NPN Pho o ran sis or with Base- Emitter Resistor
Types OP750A, OP750B, OP750C, OP750D
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Typi cal Spec ral Re sponse
Wave ength - nm
7
Sche matic
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PDF描述 |
|---|---|
| OP755A | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內帶一個基極-發射極電阻,集電極電流5.50mA) |
| OP755B | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內帶一個基極-發射極電阻,集電極電流3.40mA) |
| OP755D | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內帶一個基極-發射極電阻,集電極電流5.50mA) |
| OP755C | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內帶一個基極-發射極電阻,集電極電流2.25mA) |
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相關代理商/技術參數 |
參數描述 |
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| OP755A | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP760A | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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