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參數資料
| 型號： | OP770B |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | NPN Pho totransistor with Collector- Emitter Capacitor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 94K |
| 代理商： | OP770B |
Fea ures
Supresses high frequency noise
Variety of sensitivity ranges
Wide receiving angle
Side looking package for space limited
applications
De scrip ion
The OP770 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a clear epoxy package. The
internal collector-emitter capacitor allows
the device to be used in applications
where external high frequency emissions
could compromise signal integrity.
The device’s wide receiving angle
provides relatively even reception over a
large area.
The OP770 is 100% production tested
using an infrared light source for close
correlation with Optek’s GaAs and
GaAIAs emitters.
Side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Ab so lute Maxi mum Rat ings
(T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Op er at ng Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
°
C to +100
°
C
Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
°
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/
°
C above 25
°
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lense surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in
μ
A, use the formula I
CED
= 10
(0.040TA-3.4)
when
T
A
is ambient temperature in
°
C.
Typi cal Per form ance Curves
Prod uct Bul le tin OP770A
Feb ru ary 2000
NPN Pho o ran sis or with Collector- Emitter Capacitor
Types OP770A, OP770B, OP770C, OP770D
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Typical Spectral Response
Wavelength - nm
Sche matic
相關PDF資料 |
PDF描述 |
|---|---|
| OP770C | NPN Pho totransistor with Collector- Emitter Capacitor |
| OP770D | NPN Pho totransistor with Collector- Emitter Capacitor |
| OP775A | NPN Phototransistor with Collector- Emitter Capacitor |
| OP775B | NPN Phototransistor with Collector- Emitter Capacitor |
| OP775C | NPN Phototransistor with Collector- Emitter Capacitor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| OP770C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP770D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP775A | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP775B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP775C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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