
Fea ures
Narrow receiving angle
Linear response vs irradiance
Fast switching time
T-1 package style
Small package ideal for space limited
applications
De scrip ion
The OP906 device consists of a PIN
silicon photodiode molded in a clear
epoxy package which allows spectral
response from visible to infrared light
wavelengths. The narrow receiving angle
provides excellent on-axis coupling.
These devices are 100% production
tested using infrared light for close
correlation with Optek’s GaAs and
GaAlAs emitters. Lead spacing is 0.100
inch (2.54 mm).
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Re verse Break down Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/
o
C above 25
o
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
photodiode being tested.
(4) To calculate typical dark current in nA, use the formula I
D
= 10
(0.042 TA-1.5)
where T
A
is
ambient temperature in
o
C.
Typi cal Per orm ance Curves
Prod uct Bul e in OP906
June 1996
PIN Sili con Pho o di ode
Type OP906
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Relative Response vs.
Wavelength
λ
- Wave ength - nm
Coupling Characteristics
OP906 and OP266
Dis ance Be ween Lens Tips -inches
V
R
= 5 V
I
F
= 20 mA
3-54