
Low Noise Precision Difet
OPERATIONAL AMPLIFIER
FEATURES
G
LOW NOISE: 100% Tested, 8nV
√
Hz max
(10kHz)
G
LOW BIAS CURRENT: 1pA max
G
LOW OFFSET: 250
μ
V max
G
LOW DRIFT: 1
μ
V/
°
C max
G
HIGH OPEN-LOOP GAIN: 120dB min
G
HIGH COMMON-MODE REJECTION:
100dB min
APPLICATIONS
G
PRECISION INSTRUMENTATION
G
DATA ACQUISITION
G
TEST EQUIPMENT
G
OPTOELECTRONICS
G
MEDICAL EQUIPMENT—CAT SCANNER
G
RADIATION HARD EQUIPMENT
International Airport Industrial Park Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706
Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
BIFET
National Semiconductor Corp.,
Difet
Burr-Brown Corp.
OPA111
8
2
3
1
5
7
6
4
Case and
Substrate
Output
Trim
+V
CC
Noise-Free Cascode
*
Trim
+In
–In
–V
CC
10k
10k
*Patented
2k
2k
2k
2k
DESCRIPTION
The OPA111 is a precision monolithic dielectrically
isolated FET (
Difet
) operational amplifier. Outstand-
ing performance characteristics allow its use in the
most critical instrumentation applications.
Noise, bias current, voltage offset, drift, open-loop
gain, common-mode rejection, and power supply re-
jection are superior to BIFET
amplifiers.
Very low bias current is obtained by dielectric isola-
tion with on-chip guarding.
Laser trimming of thin-film resistors gives very low
offset and drift. Extremely low noise is achieved with
patented circuit design techniques. A new cascode
design allows high precision input specifications and
reduced susceptibility to flicker noise.
Standard 741 pin configuration allows upgrading of
existing designs to higher performance levels.
1984 Burr-Brown Corporation
PDS-526K
Printed in U.S.A. August, 1995