
WHITE
IDENTITY
RED
BLACK
GREEN
WIRE COLOR
EMITTER
COLLECTOR
CATHODE
ANODE
TOLERANCE ± .010 [0.25]
NOTE 6
[609.6]
[12.19]
.48
[3.18]
[3.18]
[1.02]
4X R .125
[2.54]
[24.38]
[30.73]
DIMENSIONS ARE IN INCHES [MILLIMETERS]
WIRE: 26 AWG, 7 STRAND
PVC INSUL., UL RATED
[ 8.89 ± 0.51]
.35 ± .02
[ 8.13 ± 0.51]
.32 ± .02
[1.4 ± 0.51]
.055 ± .02
[19.30]
.760
[3.18]
[6.48]
.255
[ 7.62 ]
.30 REF
[3.81]
.15
[16.51]
.650 REF
[5.08]
.20
[4.95]
.195
OPTICAL CL
[14.99 0.38]
.590 ± .015
±
Fea ures
.20” (5.08 mm) wide gap
24” minimum, 26 AWG wire leads .86”
(21.8 mm) deep slot
Dust protection
De scrip ion
The OPB816 consists of an infrared
emitting diode and an NPN silicon
phototransistor mounted in an opaque
housing with clear windows for dust
protection. The deep slot allows for a
longer reach of the optical center line
from the mounting plane, .650”
(16.51 mm).
Internal apertures are .010” x 0.06” for
the phototransistor “S side” and .050” x
.06” for the LED “E side”.
Custom electrical, wire or cabling is
available. Contact your local
representative or Optek for more
information.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Stor age and Op er ating Tem per a ure Range. . . . . . . . . . . . . . . . . . . . -40
°
C to +80
°
C
Input Di ode
For ward DC Cur ent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur ent (1
μ
s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse DC Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
Out put Phototransistor
Col ec or-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit er-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Col ec or DC Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
NOTES:
(1) De ate lin early 1.67 mW/
°
C above 25
°
C.
(2) All pa am e ers tested us ng pulse tech nique.
(3) Clear dust pro ection.
PRECAUTIONS:
Ex po sure of the plas ic body to chlo i nated hy dro car bons and ke ones such as
thread lock and in stant ad he sive prod ucts will de grade the plas ic body. Cleaning agents
meth a nol and isopropanol are rec om mended. Spray or wipe do not sub merge.
Prod uct Bul e in OPB816
November 2000
Slotted Op i cal Switch
Type OPB816
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
27
Visit our website at www.optekinc.com
or email us at sensors@optekinc.com