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參數(shù)資料
| 型號(hào)： | OPE5594A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | GaAs Infrared Emitter |
| 中文描述： | 砷化鎵紅外發(fā)射器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 116K |
| 代理商： | OPE5594A |
GaAs Infrared Emitter
OPE5594A
The
OPE5594S
is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm)
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-
3/4
plastic package
and has narrow beam angle with lensed package
and cup frame.
FEATURES
High-output power
Narrow beam angle
High reliability and long term stability
Available for pulse operating
APPLICATIONS
Optical emitters
Optical switches
Smoke sensors
IR remote control
IR sound transmission
STORAGE
Condition : 5
°
C~35
°
C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Power Dissipation
P
D
Forward current
I
F
Pulse forward current
I
FP
Reverse voltage
V
R
Operating temp.
Topr.
-25~ +85
Soldering temp.
Tsol.
1
.Duty ratio = 1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2
mm
from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
(Ta=25
°
C)
Item
Symbol
Forward voltage
V
F
I
F
=100mA
Reverse current
I
R
V
R
= 5V
Capacitance
Ct
f = 1
MHz
Radiant intensity
Ie
I
F
=100mA
Peak emission wavelength
I
F
= 50mA
Spectral bandwidth 50%
I
F
= 50mA
Half angle
I
F
=100mA
(Ta=25
°
C )
Unit
Rating
150
100
1.0
5.0
1
A
°
C
°
C
2
260
.
Conditions
Min.
Typ.
1.4
20
80
940
45
±
10
Max.
1.7
10
Unit
V
μ
A
pF
mW/
p
nm
nm
deg.
2-
0.5
2
2.5
2
Anode
Cathode
8
7
1
5
5
Tolerance :
±
0.2mm
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