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參數資料
| 型號： | OPE5687HP |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Speed GaAIAs Infrared Emitter |
| 中文描述： | 高速鎵鋁砷紅外發射器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 162K |
| 代理商： | OPE5687HP |
High Speed GaAlAs Infrared Emitter
OPE5687HP
The
OPE5687HP
is GaAlAs infrared emitting diode DIMENSIONS
(Unit : mm)
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
Ultra high-speed : 25ns rise time
880nm wavelength
Wide beam angle
Low forward voltage
High power and high reliability
Available for pulse operating
APPLICATIONS
Emitter of IrDA
IR Audio and Telephone
High speed IR communication
IR LANs
Available for wireless digital data transmission
STORAGE
Condition : 5
°
C~35
°
C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
(Ta=25
°
C )
Rating
150
100
1.0
4.0
-25~ +85
260
.
Item
Symbol
P
D
I
F
I
FP
V
R
Topr.
Tsol.
Unit
mW
mA
A
V
°
C
°
C
Power Dissipation
Forward current
Pulse forward current
*1
Reverse voltage
Operating temp.
Soldering temp.
*2
*1
.Duty ratio = 1/100, pulse width=0.1ms.
*2
.Lead Soldering Temperature (2
mm
from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
(Ta=25
°
C)
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Power
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Symbol
V
F
I
R
Ct
Ie
Po
λ
p
λ
θ
tr/tf
Conditions
I
F
=50mA
V
R
=4V
f=1
MHz
I
F
=50mA
I
F
=100mA
I
F
=50mA
I
F
=50
I
F
=50
I
F
=50
I
=50mA DC
+10mA p-p
Min.
Typ.
1.5
Max.
2.0
10
Unit
V
μ
A
mW/
mW
nm
nm
deg.
ns
20
50
35
880
45
±
22
25/15
25
20
Cut off frequency
*3
fc
14
MHz
2-
□
0.5
2
2.5
2
Anode
Cathode
8
7
1
5
5
Tolerance :
±
0.2mm
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