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參數資料
| 型號： | OT410T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN Silicon Phototransistor |
| 中文描述： | NPN硅光電晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 85K |
| 代理商： | OT410T |
R h o p o in t C o m p o n e n t s L t d
Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255
Germany: +49 (0) 692 199 8606 Fax: +49 (0) 692 199 8595
Email: sales@rhopointcomponents.com Website: www.rhopointcomponents.com
NPN Silicon Phototransistor
Type OT 410D and OT 410T
The OT410 sensors consist
of a high gain NPN silicon
photo transistor mounted in
hermetically sealed TO-46
package. These sensors are
ideally suited for hostile
environment operation. The
OT410D features a domed
lens and the OT410T a flat
window.
TO - 46 Package
Hermetically Sealed Device ideal for hostile
environments
High Sensitivity
Dimensions in mm
Specifications:
Operating Temperature Range
-55°C to 125°C
PARAMETERS
Light Current
H = 1mW/cm2
SYMBOL
MIN.
3 (1.5)
5 (2)
TYP MAX.
UNITS
mA
mA
OT 410D(T)-1
OT 410D(T)-2
IC(ON)
15 (6)
OT 410D(T)-3
12 (4)
mA
nA
V
Dark Current VCE= 10V, H = 0
Collector Emitter Voltage
ICED
VCED
VECD
VCE(SAT)
40
35
Emitter Collector Voltage
Saturation Voltage IC= 1mA
Angular Response
6
V
V
Deg.
0.50
OT 410D
20
OT 410T
OT 410D-1
OT 410D-6
Φ
80
6
8
Deg.
μS
μS
Rise or Fall Time
RL= 100
VCC= 10V
tr, tf
相關PDF資料 |
PDF描述 |
|---|---|
| OTC1015 | TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 20A I(C) | CHIP |
| OTC6030 | 8 PIN, 1.75KB, FLASH, 64B RAM, COMPARATOR, 8MHZ INTERNAL OSCILLATOR, -40C to +125C, 8-SOIC 150mil, TUBE |
| OTC6050 | 8 PIN, 1.75KB, FLASH, 64B RAM, COMPARATOR, 8 MHZ INTERNAL OSCILLATOR, -40C to +85C, 8-DFN, TUBE |
| OTC1550-120L | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | CHIP |
| OTC1550-80H | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | CHIP |
相關代理商/技術參數 |
參數描述 |
|---|---|
| OT410T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| OT410T2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| OT410T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| OT411 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| OT411,127 | 功能描述:雙向可控硅 THYRISTOR GP RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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