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參數資料
| 型號： | P0118MA2AL3 |
| 廠商： | 意法半導體 |
| 英文描述： | 0.8A SCRs |
| 中文描述： | 0.8A可控硅 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 177K |
| 代理商： | P0118MA2AL3 |
P01 Series
4/6
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:
Relative variation of holding current versus
gate-cathode resistance (typical values).
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
Fig. 8:
Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I2t.
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C
6
5
4
3
2
1
0
-40
0
-20
20
40
60
80
100
120
140
Tj(°C)
IH[Rgk]/IH[Rgk=1k ]
Rgk(k
)
0.4
0.6
0.8
1.0
0.2
1.6
1.8
2.0
1.2
1.4
dV/dt[Rgk] / dV/dt[Rgk=1k ]
Rgk(k
)
0
0.1
1.0
10.0
dV/dt[Cgk] / dV/dt[Rgk=1k ]
2
1
0
3
4
5
6
7
0
2
4
6
8
10
Cgk(nF)
1
10
100
1000
0
1
2
3
4
5
6
7
8
ITSM(A)
Non repetitive
TRepetitive
Numberofcycles
Onecycle
tp=10ms
ITSM(A), I t(A s)
100.0
10.0
1.0
0.1
0.01
0.10
1.00
10.00
tp(ms)
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