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參數資料
型號: P01N02LMB
廠商: Electronic Theatre Controls, Inc.
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: N溝道增強模式的邏輯電平場效應晶體管
文件頁數: 1/3頁
文件大小: 45K
代理商: P01N02LMB
1
AUG-18-2001
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P01N02LMB
SOT-23 (M3)
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
V
GS
±15
V
T
C
= 25 °C
1.2
Continuous Drain Current
T
C
= 100 °C
I
D
1.0
Pulsed Drain Current
1
I
DM
12
A
T
C
= 25 °C
0.6
Power Dissipation
T
C
= 100 °C
P
D
0.5
W
Operating Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
T
j
, T
stg
-55 to 150
T
L
275
°C
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
θ
JC
65
Junction-to-Ambient
1
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
R
θ
JA
230
°C / W
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
25
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
0.7
1.0
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±15V
±250
nA
V
DS
= 20V, V
GS
= 0V
25
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
250
μ
A
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
1.2
A
V
GS
= 7V, I
D
= 1.2A
220
250
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 1.2A
180
220
m
Ω
Forward Transconductance
1
g
fs
V
DS
= 20V, I
D
= 1.2A
16
S
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
25V
180m
Ω
1.2A
1. GATE
2. DRAIN
3. SOURCE
G
D
S
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