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參數資料
| 型號： | P0808ATG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 102K |
| 代理商： | P0808ATG |
1
Sep-20-2006
N-Channel Enhancement Mode Field
Effect Transistor
P0808ATG
TO-220
Lead Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
80
Continuous Drain Current
T
C
= 100 °C
I
D
55
Pulsed Drain Current
1
I
DM
250
Avalanche Current
I
AR
40
A
Avalanche Energy
Repetitive Avalanche Energy
2
L = 0.55mH
E
AS
400
L = 0.1mH
E
AR
20
mJ
T
C
= 25 °C
192
Power Dissipation
T
C
= 100 °C
P
D
76
W
Operating Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
j
, T
stg
-55 to 150
T
L
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
θ
JC
0.65
Junction-to-Ambient
R
θ
JA
62.5
Case-to-Heatsink
R
θ
CS
0.5
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1
％
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
75
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.5
2.3
4.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±250
nA
V
DS
= 60V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V, V
GS
= 0V, T
J
= 125 °C
10
μ
A
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
75
8m
Ω
80A
G
D
S
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