- 您現在的位置：買賣IC網 > PDF目錄367639 > P11C68-35IGDPBS (Zarlink Semiconductor Inc.) CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM PDF資料下載
參數資料
| 型號： | P11C68-35IGDPBS |
| 廠商： | Zarlink Semiconductor Inc. |
| 英文描述： | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| 中文描述： | 的CMOS / SNOS非易失性SRAM的高性能8畝× 8非易失性靜態RAM的 |
| 文件頁數： | 1/17頁 |
| 文件大小： | 162K |
| 代理商： | P11C68-35IGDPBS |
P10C68/P11C68
1
DS3600-1.2 September 1992
PRELIMINARY INFORMATION
P10C68/P11C68
(Previously PNC10C68 and PNC11C68
)
CMOS/SNOS NVSRAM
HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
(Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)
The P10C68 and P11C68 are fast static RAMs (35 and 45
ns) with a non-volatile electically-erasable PROM (EEPROM)
cell incorporating in each static memory cell. The SRAM can
be read and written an unlimited number of times while
independent non-volatile data resides in PROM.
On the P10C68 data may easily be transferred from the
SRAM to the EEPROM (STORE) and from the EEPROM back
to the SRAM ( RECALL) using the NE (bar) pin. The Store and
Recall cycles are initiated through software sequences on the
P11C68. These devices combine the high performance and
ease of use of a fast SRAM with the data integrity of non-
volatility.
The P10C68 and P11C68 feature the industry standard
pinout for non-volatile RAMs in a 28-pin 0.3-inch plastic and
ceramic dual-in-line packages.
FEATURES
I
Non-Volatile Data Integrity
I
10 year Data Retention in EEPROM
I
35ns and 45ns Address and Chip Enable Access Times
I
20ns and 25ns Output Enable Access
I
Unlimited Read and Write to SRAM
I
Unlimited Recall Cycles from EEPROM
I
10
4
Store Cycles to EEPROM
I
Automatic Recall on Power up
I
Automatic Store Timing
I
Hardware Store Protection
I
Single 5V
±
10% Operation
I
Available in Standard Package 28-pin 0.3-inch DIL
plastic and ceramic
I
Commercial and Industrial temperature ranges
Pin Name
A
0
- A
12
W
DQ
0
- DQ
7
E
G
V
CC
V
SS
Function
Address inputs
Write enable
Data in/out
Chip enable
Output enable
Power (+5V)
Ground
Non volatile enable
No connection
Pin 1
NE
Pin 1 N/C
P10C68
P11C68
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
W
NC
A
A
A
G
A
E
DQ
DQ
DQ
DQ
DQ
7
6
5
4
3
8
9
11
10
CC
NE
A
A
A
A
A
A
A
A
A
DQ
DQ
DQ
V
12
7
6
5
4
3
2
1
0
0
1
2
ss
Figure 1. Pin connections - top view.
ORDERING INFORMATION
(See back page)
相關PDF資料 |
PDF描述 |
|---|---|
| P11C68-45 | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45CG | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45CGDCBS | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45CGDPBS | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45DCBS | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| P11C68-45 | 制造商:ZARLINK 制造商全稱:Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45CG | 制造商:ZARLINK 制造商全稱:Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45CGDCBS | 制造商:ZARLINK 制造商全稱:Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45CGDPBS | 制造商:ZARLINK 制造商全稱:Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-45DCBS | 制造商:ZARLINK 制造商全稱:Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
發布緊急采購，3分鐘左右您將得到回復。