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參數資料
| 型號： | P1303BVG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 280K |
| 代理商： | P1303BVG |
PRODUCT SUMMARY
V
(BR)DSS
1
AUG-13-2004
N-Channel Enhancement Mode Field
Effect Transistor
P1303BVG
SOP-8
Lead Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
10
Continuous Drain Current
T
C
= 70 °C
I
D
8
Pulsed Drain Current
1
I
DM
50
A
T
C
= 25 °C
2.5
Power Dissipation
T
C
= 70 °C
P
D
1.6
W
Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
θ
JA
50
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1
%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1
1.5
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±100
nA
V
DS
= 24V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
10
μ
A
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
20
A
V
GS
= 4.5V, I
D
= 5A
13
20
Drain-Source On-State
Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 10A
9.5
12.5
m
Forward Transconductance
1
g
fs
V
DS
= 15V, I
D
= 10A
38
S
G : GATE
D : DRAIN
S : SOURCE
R
DS(ON)
I
D
30
12.5m
10A
G
D
S
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