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參數(shù)資料
| 型號： | P2804NVG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N- & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 蘼 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 528K |
| 代理商： | P2804NVG |
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
1
AUG-19-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804NVG
SOP-8
Lead-Free
NIKO-SEM
SYMBOL
N-Channel P-Channel
UNITS
Drain-Source Voltage
V
DS
40
-40
V
Gate-Source Voltage
V
GS
±20
±20
V
T
C
= 25 °C
7
-6
Continuous Drain Current
T
C
= 70 °C
I
D
6
-5
Pulsed Drain Current
1
I
DM
20
-20
A
T
C
= 25 °C
2
Power Dissipation
T
C
= 70 °C
P
D
1.3
W
Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
j
, T
stg
-55 to 150
T
L
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
θ
JA
62.5
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
V
GS
= 0V, I
D
= 250
μ
A
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250
μ
A
N-Ch
P-Ch
40
-40
V
DS
= V
GS
, I
D
= 250
μ
A
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
N-Ch
P-Ch
1.0
-1.0
1.5
-1.5
2.5
-2.5
V
G : GATE
D : DRAIN
S : SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
N-Channel
40
28m
7A
P-Channel
-40
65m
-5A
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