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參數資料
| 型號： | P2H80F2 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | FRD MODULE 80A/200V |
| 中文描述： | 80 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | MODULE-4 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 161K |
| 代理商： | P2H80F2 |
FRD
MODULE
80A/200V
OUTLINE DRAWING
P2H80F2
Maximum Ratings
Approx Net Weight:35g
FEATURES
* Compatible with Isolated Base SOT227
* Dual Separated Diodes
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* High Surge Capability
TYPICAL APPLICATIONS
* High Frequency Rectification
See the Next Page
Type / Grade
Parameter
Symbol
P2H80F2
200
-
-
-
-
Unit
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Parameter
V
RRM
V
RSM
V
Conditions
Max Rated
Value
Unit
Average Rectified Output Current *1
I
O(AV)
50Hz Half Sine Wave condition
Tc=96
°
C
50 Hz Half Sine Wave,1Pulse
Non-repetitive
2msec to 10msec
80
A
RMS Forward Current *1
I
F(RMS)
125
A
Surge Forward Current *1
I
FSM
800
A
I Squared t *1
Operating J unctionTemperature Range
Storage Temperature Range
Isoration Voltage
I
2
t
Tjw
Tstg
Viso
3200
A
2
s
°
C
°
C
V
-40 to +150
-40 to +125
2500
1.5(1.4)
1.5(1.4)
Base Plate to Terminals, AC1min
M4Screw
M4Screw
Case mounting
Terminals
Mounting torque
Electrical
Thermal Characteristics
Ftor
N
m
Characteristics
Symbol
Test Conditions
Max. Unit
Peak Reverse Current *1
Peak Forward Voltage *1
Reverse Recovery Time
I
RM
V
FM
trr
Rth(j-c) J unction to Case
Rth(c-f) Base Plate to Heat Sink with Thermal
Compound
V
RM
= V
RRM,
Tj= 25
°
C
I
FM
= 80A, Tj=25
°
C
Tj=25
°
C , I
FM
=10A, -di/dt=50A/
μ
s
75
1.05
50
0.51
μ
A
V
ns
Thermal Resistance *1
0.3
°
C/W
*1: Value Per 1Arm
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相關代理商/技術參數 |
參數描述 |
|---|---|
| P2H80F4 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:FRD MODULE 80A/400V |
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| P2H80QH15 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
| P2H80QH20 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
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