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參數資料
| 型號： | P3207-05 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | PbSe photoconductive detector |
| 中文描述： | 硒化鉛光電探測器 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 174K |
| 代理商： | P3207-05 |
P791/P2038/P2680 series, P3207-05
Detection capability up 5 μm range (TE-cooled type)
I N F R A R E D D E T E C T O R
PbSe photoconductive detector
Features
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High-speed response
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Room temperature operation
Compared to other types of detectors used in the same
wavelength range, PbSe cells have higher response
speed and can also operate at room temperature,
making them useful in a wide range of applications
such as gas analyzers, etc.
l
Lower temperature detection limit: 50 C approx.
Applications
l
Radiation thermometer
l
Flame detector
l
Gas analyzer
l
Film thickness gauge
Accessories (Optional)
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Heatsink for one-stage TE-cooled type
l
Heatsink for two-stage TE-cooled type
l
Temperature controller for TE-cooled type
l
Preamplifier for PbS/PbSe photoconductive detector C3757-02
l
Infrared detector module with preamp Non-cooled type
P4245
A3179
A3179-01
C1103-04
Cooled type
P4639
Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in
analytical instruments.
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相關代理商/技術參數 |
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| P3207-07 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Infrared detectors with fast response and high sensitivity in 5 m wavelength band |
| P320AD50 | 制造商:Texas Instruments 功能描述: |
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| P320DB70RI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| P320DB70VI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
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