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參數資料
| 型號： | P4C1048L-70TMB |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | LOW POWER 512K x 8 CMOS STATIC RAM |
| 中文描述： | 低功率為512k × 8的CMOS靜態RAM |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 168K |
| 代理商： | P4C1048L-70TMB |
1
Document #
SRAM129
REV D
Revised J uly 2007
P4C1048L
LOW POWER 512K x 8
CMOS STATIC RAM
locations are specified on address pins A
to A
18
. Read-
ing is accomplished by device selection (
CE
low) and
output enabling (
OE
) while write enable (
WE
) remains
HIGH. By presenting the address under these condi-
tions, the data in the addressed memory location is pre-
sented on the data input/output pins. The input/output
pins stay in the HIGH Z state when either
CE
is HIGH or
WE
is LOW.
The P4C1048L is packaged in a 32-pin 445 mil plastic
SOP, 32-pin TSOP II, or 600 mil plastic or ceramic side-
brazed DIP.
The P4C1048L is a 4 Megabit low power CMOS static
RAM organized as 512K x 8. The CMOS memory re-
quires no clocks or refreshing, and has equal access
and cycle times. Inputs are fully TTL-compatible. The
RAM operates from a single 5V±10% tolerance power
supply.
Access times as fast as 45 ns are availale. CMOS is
utilized to reduce power consumption to a low level.
The P4C1048L device provides asynchronous opera-
tion with matching access and cycle times. Memory
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Automatic Power Down
Packages
—32-Pin 600 mil Plastic and Ceramic DIP
—32-Pin 445 mil SOP
—32-Pin TSOP II
V
Current
— Operating: 35mA
— CMOS Standby: 100μA
Access Times
—45/55/70/100 ns
Single 5 Volts ±10% Power Supply
Easy Memory Expansion Using
Inputs
CE
and
OE
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (P600, C10),
SOP (S12), TSOP II (T4)
TOP VIEW
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