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參數(shù)資料
型號(hào): P4C116L-2540MB
廠商: Pyramid Semiconductor Corporation
英文描述: ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
中文描述: 超高速2K × 8靜態(tài)CMOS五羊
文件頁(yè)數(shù): 1/14頁(yè)
文件大小: 251K
代理商: P4C116L-2540MB
1
Document #
SRAM110
REV A
Revised October 2005
P4C116/P4C116L
ULTRA HIGH SPEED 2K x 8
STATIC CMOS RAMS
DESCRIPTION
The P4C116/P4C116L are 16,384-bit ultra high-speed
static RAMs organized as 2K x 8. The CMOS memories
require no clocks or refreshing and have equal access
and cycle times. Inputs are fully TTL-compatible. The
RAMs operate from a single 5V±10% tolerance power
supply. Current drain is typically 10 μA from a 2.0V
supply.
Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption.
The P4C116 is available in 24-pin 300 mil DIP, SOJ and
SOIC packages, a solder seal flatpack and 4 different
LCC packages (24, 28, 32, and 40 pin).
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35 ns (Commercial)
– 15/20/25/35 ns (Military)
Low Power Operation
Output Enable Control Function
Single 5V±10% Power Supply
Common Data I/O
Fully TTL Compatible Inputs and Outputs
Produced with PACE II Technology
TM
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP, SOIC, SOJ
– 24-Pin Solder Seal Flat Pack
– 24-Pin Rectangular LCC (300 x 400 mils)
– 28-Pin Square LCC (450 x 450 mils)
– 32-Pin Rectangular LCC (450 x 550 mils)
– 40-Pin Square LCC (480 x 480 mils)
LCC configurations at end of datasheet
DIP (P4, C4), SOJ (J4), SOIC (S4)
SOLDER SEAL FLAT PACK (FS-1) SIMILAR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P4C116L-25CMB 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
P4C116L-25DC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
P4C116L-25DM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
P4C116L-25FSMB 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
P4C116L-25JC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
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