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參數資料
| 型號： | P4C149-20LMB |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS |
| 中文描述： | 1K X 4 STANDARD SRAM, 20 ns, CQCC18 |
| 封裝： | 0.290 X 0.430 INCH, CERAMIC, LCC-18 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 289K |
| 代理商： | P4C149-20LMB |
1
Document #
SRAM104
REV B
Revised April 2007
DESCRIPTION
The P4C148 and P4C149 are 4,096-bit ultra high-speed
static RAMs organized as 1K x 4. Both devices have
common input/output ports. The P4C148 enters the
standby mode when the chip enable (
CE
) goes HIGH;
with CMOS input levels, power consumption is extremely
low in this mode. The P4C149 features a fast chip select
capability using
CS
. The CMOS memories require no
clocks or refreshing, and have equal access and cycle
times. Inputs are fully TTL-compatible. The RAMs
operate from a single 5V
±
10%
tolerance power supply.
P4C148, P4C149
ULTRA HIGH SPEED 1K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35/45/55 ns (Commercial)
– 15/20/25/35/45/55 ns (P4C148 Military)
Low Power Operation
Single 5V ± 10% Power Supply
Two Options
– P4C148 Low Power Standby Mode
– P4C149 Fast Chip Select Control
Common Input/Output Ports
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 18 Pin 300 mil DIP
– 18 Pin LCC (295 x 335 mil) [P4C148 only]
– 18 Pin LCC (290 x 430 mil)
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption when
active; for the P4C148, consumption is further reduced in
the standby mode.
The P4C148 and P4C149 are available in 18-pin 300 mil
DIP packages, as well as 2 different LCC packages,
providing excellent board level densities.
P4C148 DIP (C9, D1, P1)
P4C149 DIP (P1)
P4C148 LCC (L7, L7-1)
P4C149 LCC (L7)
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