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參數(shù)資料
| 型號： | P4C174-20CMB |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | HIGH SPEED 8K x 8 CACHE TAG STATIC RAM |
| 中文描述： | 8K X 8 CACHE TAG SRAM, 20 ns, CDIP28 |
| 封裝： | 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 290K |
| 代理商： | P4C174-20CMB |
1
Document #
SRAM118
REV C
Revised August 2006
P4C174
HIGH SPEED 8K x 8
CACHE TAG STATIC RAM
FEATURES
High Speed Address-To-Match - 8 ns Maximum
Access Time
High-Speed Read-Access Time
– 8/10/12/15/20/25 ns (Commercial)
– 15/20/25 ns (Military)
Open Drain MATCH Output
Reset Function
8-Bit Tag Comparison Logic
Automatic Powerdown During Long Cycles
Data Retention at 2V for Battery Backup
Operation
Advanced CMOS Technology
Low Power Operation
Package Styles Available
— 28 Pin 300 mil DIP
— 28 Pin 300 mil Plastic SOJ
Single Power Supply
— 5V±10%
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DESCRIPTION
The P4C174 is a 65,536 bit high speed cache tag static
RAM organized as 8K x 8. The CMOS memory has equal
access and cycle times. Inputs are fully TTL-compatible.
The cache tag RAMs operate from a single 5V±10%
power supply. An 8-bit data comparator with a MATCH
output is included for use as an address tag comparator
in high speed cache applications. The reset function
provides the capability to reset all memory locations to a
LOW level.
The MATCH output of the P4C174 reflects the compari-
son result between the 8-bit data on the I/O pins and
the addressed memory location. 8K Cache lines can be
mapped into 1M-Byte address spaces by comparing 20
address bits organized as 13-line address bits and 7-
page address bits.
Low power operation of the P4C174 is enhanced by
automatic powerdown when the memory is deselected or
during long cycle times. Also, data retention is main-
tained down to V
CC
= 2.0. Typical battery backup appli-
cations consume only 30
μ
W at V
CC
=
3.0V.
DIP (C5, P5), SOJ (J5)
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