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參數資料
| 型號： | P6FMBJ11A |
| 廠商： | RECTRON LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CONNECTOR |
| 中文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 1086K |
| 代理商： | P6FMBJ11A |
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. V
F
= 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V
F
= 5.0V on P6FMBJ100 thur P6FMBJ400 devices.
NOTES :
2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 600 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
TVS
P6FMBJ
SERIES
DO-214AA
600 WATT PEAK POWER 1.0 WATT STEADY STATE
GPP TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400
Electrical characteristics apply in both direction
1998-8
Ratings at 25
o
C ambient temperature unless otherwise specified.
RATINGS
Steady State Power Dissipation at T
L
= 75
o
C ( Note 2 )
Peak Pulse Durrent with a 10/1000uS waveform
( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 50A for
unidirectional only ( Note 3,4 )
SYMBOL
I
FSM
V
F
T
J
, T
STG
Volts
-55 to + 150
0
C
UNITS
Amps
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)
Minimum 600
100
SEE NOTE 4
VALUE
Operating and Storage Temperature Range
P
PPM
Watts
I
PPM
Amps
SEE TABLE 1
Peak Forward Surge Current, 8.3mS single half sine wave super-
imposed on rated load (Jedec Method)(Note 3,2) unidirectional only
P
M
(
AV
)
5.0
Amps
Back
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相關代理商/技術參數 |
參數描述 |
|---|---|
| P6FMBJ11A-W | 功能描述:TVS 二極管 - 瞬態電壓抑制器 5% RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6FMBJ11CA-W | 功能描述:TVS 二極管 - 瞬態電壓抑制器 5% bi-dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6FMBJ11C-W | 功能描述:TVS 二極管 - 瞬態電壓抑制器 bi-dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6FMBJ11-W | 功能描述:TVS 二極管 - 瞬態電壓抑制器 _ RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6FMBJ12 | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) |
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