- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189764 > P6KE6.8A-B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC PDF資料下載
參數(shù)資料
| 型號： | P6KE6.8A-B |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 133K |
| 代理商： | P6KE6.8A-B |
81
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Revision: January 09, 2009
Axial Leaded – 600W > P6KE series
P6KE Series
Please refer to http://www.Littelfuse.com/series/P6KE.html for current information.
P6KE
S
eries
AGENCY
AGENCY FILE NUMBER
E128662/E230531
P6KE Series
TVS devices are ideal for the protection of I/O interfaces,
V
CC bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Applications
Features
The P6KE Series is designed specically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Description
Parameter
Symbol
Value
Unit
Peak Pulse Power Dissipation by
10x1000μs test waveform (Fig.1)
(Note 1)
P
PPM
600
W
Steady State Power Dissipation on
ininite heat sink at T
L=75C (Fig. 5)
P
D
5.0
W
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
only (Note 2)
I
FSM
100
A
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
only (Note 3)
V
F
3.5/5.0
V
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to 175
°C
Typical Thermal Resistance Junction
to Lead
R
uJL
20
°C/W
Typical Thermal Resistance Junction
to Ambient
R
uJA
75
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A = 25
O
C per Fig. 2.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
3. V
F<3.5V for devices of VBR _
<
200V and V
F< 5.0V for devices of VBR _
>
201V.
Maximum Ratings and Thermal Characteristics
(T
A=25
O
C unless otherwise noted)
Agency Approvals
temperature coefcient
ΔV
BR = 0.1% x VBR@25°C x ΔT
junction in DO-15 Package
capability at 10×1000μs
waveform, repetition rate
(duty cycles):0.01%
typically less than 1.0ps
from 0 Volts to BV min
capability
resistance
R less than 1μA
above 13V
soldering guaranteed:
260°C/40 seconds /
0.375”,(9.5mm) lead
length, 5 lbs., (2.3kg)
tension
Underwriters Laboratory
Flammability classication
94V-O
P6KE
S
eries
RoHS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P6KE68A-B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| P6KE68CA-B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| P6KE75A-B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| P6KE75CA-B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| P6KE8.2CA-B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P6KE68A-B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 58.10V RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE68A-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 68V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE68A-E3/23 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 68V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE68A-E3/4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 68V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE68A-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 68V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。