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參數(shù)資料
型號: P6SMBJ12
廠商: DIOTEC SEMICONDUCTOR AG
元件分類: 參考電壓二極管
英文描述: Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
中文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁數(shù): 1/4頁
文件大小: 173K
代理商: P6SMBJ12
1
) Non-repetitive current pulse see curve I
PPM
= f (t
r
)
Hchstzulssiger Spitzenwert eines einmaligen Strom-Impulses, siehe Kurve I
PPM
= f (t
r
)
2
) Unidirectional diodes only – nur für unidirektionale Dioden
3
) Mounted on P.C. board with 50 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 50 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
25.02.2003
1
P6 SMBJ 6.5 ... P6 SMBJ 170CA
Surface Mount
unidirectional and bidirectional
Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale
Spannungs-Begrenzer-Dioden
für die Oberflchenmontage
Pulse power dissipation – Impuls-Verlustleistung
600 W
Maximum stand-off voltage
Maximale Sperrspannung
6.5...170 V
Plastic case
Kunststoffgehuse
~ SMB
~ DO-214AA
Weight approx. – Gewicht ca.
0.1 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
see page 18
siehe Seite 18
Suffix “C” or “CA” for bidirectional types
Suffix “C” oder “CA” für bidirektionale Typen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Peak pulse power dissipation (10/1000 s waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 s)
T
A
= 25 C
P
PPM
600 W
1
)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
T
T
= 75 C
P
M(AV)
5 W
Peak forward surge current, 60 Hz half sine-wave
Stostrom für eine 60 Hz Sinus-Halbwelle
T
A
= 25 C
I
FSM
100 A
2
)
Max. instantaneous forward voltage
Augenblickswert der Durchlaspannung
I
F
= 25 A
V
F
< 3.0 V
2
)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 50…+150 C
– 50…+150 C
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
R
thA
< 60 K/W
3
)
Thermal resistance junction to terminal
Wrmewiderstand Sperrschicht – Anschlu
R
thT
< 15 K/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P6SMBJ120 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 97.2Vso 108Vbr 3.5A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ120A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 102Vso 114Vbr 3.6A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ120A-T3 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
P6SMBJ120C 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 97.2Vso 108Vbr 3.5A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ120CA 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 102Vso 114Vbr 3.6A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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