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參數資料
| 型號： | P75NF |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道75V的- 0.009歐姆- 75A條D2PAK/I2PAK/TO-220 STripFET⑩二功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 382K |
| 代理商： | P75NF |
1/11
April 2002
.
STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V - 0.009
- 75A D
2
PAK/I
2
PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.009
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW THRESHOLD DRIVE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements
.
APPLICATIONS
I
SOLENOID AND RELAY DRIVERS
I
DC MOTOR CONTROL
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB75NF75L/-1
STP75NF75L
75 V
75 V
<0.011
<0.011
75 A
75 A
1
2
3
1
3
123
TO-220
D
2
PAK
TO-263
I
2
PAK
TO-262
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Current limited by package
(
)
Pulse width limited by safe operating area.
(1) I
≤
75A, di/dt
≤
500A/μs, V
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 37.5A, V
DD
Parameter
Value
75
75
± 15
75
70
300
300
2
20
680
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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