
Page 1
January 2002
Peimnay
VCC
PA2110 Tri-Band GSM Power Amplifier Module
A dv a n c e I n f o rm a t i on
HiMARK Technology, Inc. reserves the right to change the product described in this datasheet. All information contained
in this datasheet is subject to change without prior notice. HiMARK Technology, Inc. assumes no responsibility for the
use of any circuits shown in this datasheet.
Description
as a final RF amplifier in EGSM900, DCS1800, and PCS1900 hand-held digital cellular
equipment. It also supports GPRS operations. The device consists of a PAIC manufactured
on an advanced Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) pro-
cess, a CMOS current buffer and off-chip passive components for 50ohm input/output
impedance match. The IC chip has two separate blocks, one of which operates in GSM900
band, and the other in DCS1800 and PCS1900 bands. The CMOS current buffer minimize
the requisite power control current to as low as 60
μ
A
. The die and components are
mounted on a laminate substrate and encapsulated with plastic molding to minimize board
space.
Features
Single 2.9 to 4.8V Supply Voltage
+35dBm EGSM Output Power at 3.5V
+32.5dBm DCS/PCS Output Power at 3.5V
55% EGSM and 50% DCS/PCS Efficiency
Supports GSM, E-GSM, and DCS/PCS
16-pin LCC package (9.1mm x 11.6mm)
Applications
3V Triple-Band EGSM900/DCS1800/PCS1900 Handsets
Commercial and Consumer Systems
Portable Battery-Powered Equipment
GPRS Compatible
Block Diagram
the wireless IC company
EGSM_IN
CMOS
Current
Buffer
Power Control
DCS/PCS_IN
Match
Match
Match
Match
HBT
Band Select
DCS/PCS_OUTPUT
EGSM_OUTPUT