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參數(shù)資料
| 型號(hào)： | PB10S6 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SINGLE - PHASE SILICON BRIDGE RECTIFIER |
| 中文描述： | 3.7 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 34K |
| 代理商： | PB10S6 |
DIODE
Type:
PB10S1,2,4,6
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:8.5g
FEATURES
* Surge Overload Rating : 150 Amperes Peak
* Low Forward Voltage Drop
* Mounting Position : Any
SINGLE – PHASE SILICON BRIDGE RECTIFIER
Rating
Symbol
PB10S1
PB10S2
PB10S4
PB10S6
Unit
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
V
RRM
V
RSM
100
120
10
3.7
200
240
400
480
600
680
V
V
Tc=102
°
C, With 200x200x1.5mm,Al-Fin
Ta=40
°
C, Without Fin
50 Hz Half Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
1500 Terminal to Base, AC 1min.
0.5
Recommended value
Average Rectified Output Current
I
O
A
Surge Forward Current Per 1 Arm
I
FSM
150
A
Operating J unctionTemperature Range
Storage Temperature Range
Insuration Withstand Voltage
Mounting torque
Electrical
Thermal Characteristics
T
jw
T
stg
V
iso
F
w
°
C
°
C
V
N
m
Characteristics
Symbol
I
RM
V
FM
Rth(j-c) J unction to Case(total)
Conditions
Min. Typ.
-
-
-
Max. Unit
5
1.0
3.5
Peak Reverse Current Per 1 Arm
Peak Forward Voltage Per 1 Arm
Thermal Resistance
Tj= 25
°
C, V
RM
= V
RRM
Tj= 25
°
C, I
FM
= 5A
-
-
-
μ
A
V
°
C/W
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