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參數資料
型號: PBMB200A6
廠商: NIHON INTER ELECTRONICS CORP
元件分類: 功率晶體管
英文描述: IGBT MODULE H-Bridge 200A 600V
中文描述: 200 A, 600 V, N-CHANNEL IGBT
文件頁數: 1/3頁
文件大小: 118K
代理商: PBMB200A6
IGBT
MODULE
H-Bridge 200A 600V
PBMB200A6
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS
(Tc=25
°
C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
Collector Current
1 ms
Collector Power Dissipation
J unction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Fall Time
Turn-off Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Item
DC
Forward Current
1 ms
Characteristic
Symbol
Peak Forward Voltage
V
F
Reverse Recovery Time
t
rr
THERMAL CHARACTERISTICS
Characteristic
IGBT
Thermal Impedance
DIODE
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
PBMB200A6
600
+/ - 20
200
400
780
-40 to +150
-40 to +125
2500
Unit
V
V
A
W
°
C
°
C
V
F
TOR
3
N
m
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=600V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=200A,V
GE
=15V
V
CE
=5V,I
C
=200mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 300V
R
L
= 3 ohm
R
G
= 3.6 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
2.1
-
20,000
0.15
0.25
0.2
0.45
Max.
2.0
1.0
2.6
8.0
-
0.3
0.4
0.35
0.7
Unit
mA
μ
A
V
V
pF
Switching Time
μ
s
Symbol
I
F
I
FM
Rated Value
200
400
Unit
A
Test Condition
I
F
=200A,V
GE
=0V
I
F
=200A,V
GE
=-10V,di/dt=200A/
μ
s
Min.
-
-
Typ.
1.9
0.15
Max.
2.4
0.25
Unit
V
μ
s
Symbol
Test Condition
Min.
-
-
Typ.
-
-
Max.
0.16
0.38
Unit
R
th(j-c)
J unction to Case
°
C/W
8- fasten- tab No 110
Dimension(mm)
Approximate Weight : 650g
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