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參數資料
| 型號： | PBMB75B12 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT MODULE H-Bridge 75A 1200V |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 文件頁數： | 1/3頁 |
| 文件大小： | 131K |
| 代理商： | PBMB75B12 |
IGBT
MODULE
H-Bridge 75A 1200V
PBMB75B12
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS
(Tc=25
°
C)
Item
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
PBMB75B12
1200
+/ - 20
75
150
400
-40 to +150
-40 to +125
2500
Unit
V
V
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
1 ms
Collector Current
A
Collector Power Dissipation
J unction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Fall Time
Turn-off Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Item
DC
Forward Current
1 ms
W
°
C
°
C
V
F
TOR
2
N
m
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=1200V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=75A,V
GE
=15V
V
CE
=5V,I
C
=75mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 600V
R
L
= 8 ohm
R
G
= 13 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
1.9
-
6300
0.25
0.40
0.25
0.80
Max.
2.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.00
Unit
mA
μ
A
V
V
pF
Switching Time
μ
s
Symbol
I
F
I
FM
Rated Value
75
150
Unit
A
Characteristic
Symbol
V
F
t
rr
Test Condition
I
F
=75A,V
GE
=0V
I
F
=75A,V
GE
=-10V,di/dt=150A/
μ
s
Min.
-
-
Typ.
1.9
0.2
Max.
2.4
0.3
Unit
V
μ
s
Peak Forward Voltage
Reverse Recovery Time
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min.
-
-
Typ.
-
-
Max.
0.3
0.6
Unit
IGBT
DIODE
Thermal Impedance
R
th(j-c)
J unction to Case
°
C/W
8- fasten- tab No 110
Dimension(mm)
Approximate Weight : 430g
２
1
4
1
3
20
1
9
32
3
1
26
25
３
５
１
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