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參數資料
| 型號： | PBPC1002 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 橋式整流 |
| 英文描述： | 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 30K |
| 代理商： | PBPC1002 |
DS21312 Rev. D-2
1 of 2
PBPC1001-PBPC1007
PBPC1001 - PBPC1007
10A BRIDGE RECTIFIER
Features
A
E
G
H
C
B
A
D
AC
+
-
PBPC-8
Dim
Min
Max
A
18.54
19.56
B
6.35
7.60
C
22.20
—
D
1.27
Typical
E
5.33
7.37
G
3.60
4.00
H
12.70 Typical
J
2.38 X 45° Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Mechanical Data
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
PBPC
1001
PBPC
1002
PBPC
1003
PBPC
1004
PBPC
1005
PBPC
1006
PBPC
1007
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
(Note 1) @ TC = 50°C
(Note 2) @ TC = 50°C
IO
10
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage (per element)
@ IF = 5.0A
VFM
1.1
V
Peak Reverse Current
@TC = 25°C
at Rated DC Blocking Voltage (per element) @ TC = 100°C
IR
10
1.0
A
mA
I2t Rating for Fusing (t<8.3ms) (Note 3)
I2t64
A2s
Typical Junction Capacitance, per element (Note 4)
Cj
110
pF
Typical Thermal Resistance Junction to Case (per element)
RθJC
7.5
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +125
°C
Notes:
1. Mounted on metal chassis.
2. Mounted on PC board FR-4 material.
3. Non-repetitive, for t > 1.0ms and < 8.3ms.
4. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
Diffused Junction
High Current Capability
Surge Overload Rating to 150A Peak
High Case Dielectric Strength of 1500V
Ideal for Printed Circuit Board Application
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component Index,
File Number E95060
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Marked on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 Inch-pounds Maximum
Weight:
3.8 grams (approx)
Mounting Position: Any
Marking: Type Number
POWER SEMICONDUCTOR
相關PDF資料 |
PDF描述 |
|---|---|
| PBPC603 | 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| PBRC-2.00KR | CERAMIC RESONATOR, 2 MHz |
| PBRC-6.00HR | RESONATOR CERM W/CAP 6.00MHZ |
| PBRC-4.00HR | Ceramic Resonator; Resonant Frequency:4MHz; Frequency Tolerance:0.5%; Terminal Type:Surface Mount (SMD SMT); Series:PBRC RoHS Compliant: Yes |
| PBRC-8.00HR | RESONATOR CERM W/CAP 8.00MHZ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PBPC1003 | 功能描述:橋式整流器 10A 200V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| PBPC1004 | 功能描述:橋式整流器 10A 400V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| PBPC1005 | 功能描述:橋式整流器 10A 600V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| PBPC1006 | 功能描述:橋式整流器 10A 800V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| PBPC1007 | 功能描述:橋式整流器 10A 1000V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
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