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參數(shù)資料
| 型號： | PBRP123YT,215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 114K |
| 代理商： | PBRP123YT,215 |
1.
Product prole
1.1 General description
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBRN123YT.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm2.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PBRP123YT
PNP 800 mA, 40 V BISS RET; R1 = 2.2 k
, R2 = 10 k
Rev. 01 — 17 December 2007
Product data sheet
I 800 mA repetitive peak output current
I Low collector-emitter saturation voltage
VCEsat
I High current gain hFE
I Reduces component count
I Built-in bias resistors
I Reduces pick and place costs
I Simplies circuit design
I ±10 % resistor ratio tolerance
I Digital application in automotive and
industrial segments
I Switching loads
I Medium current peripheral driver
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
40
V
IO
output current
[1][2] --
600
mA
IORM
repetitive peak output current
tp ≤ 1 ms;
δ≤ 0.33
[3] --
800
mA
R1
bias resistor 1 (input)
1.54
2.2
2.86
k
R2/R1
bias resistor ratio
4.1
4.55
5
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