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參數(shù)資料
型號(hào): PBV-R001-F1-5
廠商: Rhopoint Components Ltd.
英文描述: Precision Resistor
中文描述: 精密電阻
文件頁數(shù): 1/2頁
文件大小: 43K
代理商: PBV-R001-F1-5
Precision Resistor Type PBV
Spec Sheet R361-1/2 July 97
Technical Data
Resistance range
Tolerances
Temperature coefficient ( R > 10 mOhm )
Applicable temperature range
Load capacity
Thermal resistance to aluminum base plate
Thermal resistance to ambient
Dielectric withstanding voltage
Inductance ( R = 50 mOhm )
Stability ( nominal load at 70 °C )
0.5 mOhm - 1 Ohm
0.5 %, 1 %, 5 %
< 30 ppm/K ( 20 °C to 60 °C )
-55 °C to +125 °C
3 W / 10 W with heatsink provided
Rth < 3 K/W
Rth < 15 K/W
500 V AC
< 5 nH
deviation < 0.5 % after 2,000 h
Remarks:
- Standard resistance values according to E12 with the additionel values of 2 and 5
- Minimum quantity of other values on request
- Tolerance 0.5% for values from 4,7 mOhm
The four-terminal resistor type
PBV
derived from type PBH
is especially designed for the low impedance range, in
order to obtain lowest temperature coefficient values, and
in order to guarantee the independence of the resistance
value from the soldering quality. The use of the precision
resistance material
MANGANIN
combined with a highly
temperature resistant and humidity insusceptible Duroplast
cover as well as optimization of layout and lines result in a
high longterm stability, low temperature coefficient and low
inductance.
The shape is compatible with the latest power transistors.
The resistor is mounted through a center bore or
spring clamp to a heatsink, whereby the large area of the
base plate will provide excellent heat transfer. The low
thermal resistance between resistor foil and aluminum
base plate warrants for a low temperature rise at nominal
load in this configuration and permits transient overloading
up to one magnitude.
The resistor is ideally suited for applications in power
electronic and control technique, as most applications at
inductive loading will require operation with switched power
regulating units.
Short connection distances and small dimensions at high
load capacity and low inductance are a prerequi-
site to obtain high switching frequencies.
Temperature dependence of the electrical resistance
of ISA-PLAN Resistors
-40
-20
20
40
60
80
100
120
T [
o
C]
-0.4
-0.2
0.2
R/R
20
[%]
dimensions (mm)
0
20
40
60
80
100
120
T
G
/ [
o
C]
0.25
0.5
0.75
1
P / P
Nenn
power derating curve
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