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參數(shù)資料
| 型號(hào)： | PBYL2025B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢(shì)壘整流二極管) |
| 中文描述： | 20 A, 25 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 47K |
| 代理商： | PBYL2025B |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL2025B series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 20 V/ 25 V
I
F(AV)
= 20 A
V
F
≤
0.43 V
GENERAL DESCRIPTION
PINNING
SOT404
Schottky rectifier diodes intended
for use as output rectifiers in low
voltage, high frequency switched
mode power supplies.
PIN
DESCRIPTION
1
no connection
2
cathode
1
The PBYL2025B series is supplied
in the SOT404 surface mounting
package.
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL20
20B
20
25B
25
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
-
V
V
RWM
-
20
25
V
V
R
I
F(AV)
T
mb
≤
120 C
square wave;
δ
= 0.5; T
mb
≤
131 C
-
-
20
25
V
A
20
I
FRM
square wave;
δ
= 0.5; T
mb
≤
131 C
-
40
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
180
200
A
A
I
RRM
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
2
A
T
j
-
150
C
T
stg
1
. It is not possible to make connection to pin 2 ofthe SOT404 package.
- 65
175
C
k
a
3
tab
1
3
tab
2
March 1998
1
Rev 1.000
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| PBYL2520CT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
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| PBYL2525CTB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
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