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參數資料
| 型號： | PBYR1060 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SNAP LOCK CABLE MARKER - B |
| 中文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 38K |
| 代理商： | PBYR1060 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR10100 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 60 V/ 80 V/ 100 V
I
F(AV)
= 10 A
V
F
≤
0.7 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
1
cathode
2
anode
The PBYR10100 series is supplied
in the conventional leaded SOD59
(TO220AC) package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
80
UNIT
PBYR10
60
100
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
-
60
80
100
V
V
RWM
-
60
80
100
V
V
R
I
F(AV)
T
mb
≤
139 C
square wave;
δ
= 0.5; T
mb
≤
133 C
-
-
60
80
10
100
V
A
I
FRM
square wave;
δ
= 0.5; T
mb
≤
133 C
-
20
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
135
150
A
A
I
RRM
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
2
K/W
in free air
-
60
-
K/W
k
1
a
2
1
tab
2
March 1998
1
Rev 1.200
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