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參數資料
型號: PBYR2060CT
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DB25 EXT CABLE 15 FT FF
中文描述: 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁數: 1/6頁
文件大小: 46K
代理商: PBYR2060CT
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 60 V/ 80 V/ 100 V
I
O(AV)
= 20 A
V
F
0.7 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR20100CT series is supplied in the SOT78 conventional leaded package.
The PBYR20100CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
80CT
UNIT
PBYR20
PBYR20
60CT
60CTB 80CTB 100CTB
60
80
100CT
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
100
V
V
RWM
-
60
80
100
V
V
R
I
O(AV)
T
mb
139 C
square wave;
δ
= 0.5;
T
mb
133 C
-
-
60
80
20
100
V
A
I
FRM
square wave;
δ
= 0.5;
T
133 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
20
A
I
FSM
-
-
135
150
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
1. It is not possible to make connection to pin 2 of the SOT404 package.
- 65
175
C
k
a1
1
a2
3
2
1
3
tab
2
1 2 3
tab
November 1998
1
Rev 1.300
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