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參數資料
| 型號： | PBYR2150CT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Connector assemblies, Computer cables; |
| 中文描述： | 1 A, 150 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數： | 3/5頁 |
| 文件大小： | 68K |
| 代理商： | PBYR2150CT |
1996 Oct 14
3
Philips Semiconductors
Preliminary specification
Schottky barrier double diode
PBYR2150CT
Notes
1.
2.
Refer to SOT223 standard mounting conditions.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulsed test: t
p
= 300
μ
s;
δ
= 0.02.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT223 standard mounting conditions.
T
stg
T
j
T
amb
storage temperature
65
65
+150
°
C
°
C
°
C
junction temperature
+150
operating ambient temperature
80
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.2
I
F
= 0.1 A; note 1
I
F
= 0.5 A; note 1
I
F
= 1 A; note 1
I
F
= 1 A; T
j
= 100
°
C; note 1
V
R
= V
RRMmax
; note 1; see Fig.3
V
R
= V
RRMmax
; T
j
= 100
°
C; note 1;
see Fig.3
V
R
= 4 V; f = 1 MHz; see Fig.4
400
mV
650
mV
850
mV
690
mV
mA
I
R
reverse current
1
10
mA
C
d
diode capacitance
100
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
70
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
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