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參數資料
| 型號： | PBYR3045PTF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | REMOTE UNIT ONLY FOR MICRW/ PS/2 SRL, AUDIO, 2VGA |
| 中文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | PBYR3045PTF |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR3045PT series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
0
5
10
IF(AV) / A
15
20
25
0
5
10
15
PBYR1645
PF / W
D = 1.0
0.5
0.2
0.1
150
143
136
129
Tmb(max) / C
D =
t
p
t
p
T
T
t
I
Vo = 0.302
Rs = 0.012
0
25
50
100
10
1
0.1
0.01
IR / mA
VR/ V
PBYR1645
75 C
100 C
125 C
150 C
Tj = 50 C
0
5
10
15
0
2
4
6
8
10
12
a = 1.57
1.9
2.8
4
PBYR1645
IF(AV) / A
PF / W
Tmb(max) / C
150
147.2
144.4
141.6
138.8
136
133.2
2.2
Vo = 0.302
Rs = 0.012
1
10
100
100
10000
1000
Cd / pF
VR / V
PBYR1645
0
0.2
0.4
0.6
VF / V
0.8
1
1.2
1.4
0
10
20
30
40
50
PBYR1645
IF / A
Tj = 25 C
Tj = 125 C
typ
max
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp / s
Zth j-mb (K/W)
P
t
p
t
D
August 1996
3
Rev 1.100
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